Datasheet CEB45N10 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CEB45N10	N-Channel Enhancement Mode Field Effect Transistor CEP45N10/CEB45N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 44A, RDS(ON) = 39mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-26	CET

CEB45 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CEB45N10	N-Channel Enhancement Mode Field Effect Transistor CEP45N10/CEB45N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 44A, RDS(ON) = 39mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D	CET

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Número de pieza	Descripción	Fabricantes	PDF
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