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Datasheet CEB12P10 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CEB12P10 | P-Channel Enhancement Mode Field Effect Transistor CEP12P10/CEB12P10
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-100V, -11A, RDS(ON) =315mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D
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S CEB SERIES TO- |
CET |
CEB12 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CEB12P10 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
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CEB12N65 | N-Channel Enhancement Mode Field Effect Transistor |
CET |
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CEB12N6 | N-Channel Enhancement Mode Field Effect Transistor |
CET |
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Número de pieza | Descripción | Fabricantes | |
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