|
|
Datasheet CEB01N6 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | CEB01N6 | N-Channel Enhancement Mode Field Effect Transistor CEP01N6/CEB01N6 CEI01N6/CEF01N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP01N6 CEB01N6 CEI01N6 CEF01N6 VDSS 650V 650V 650V 650V RDS(ON) 15Ω 15Ω 15Ω 15Ω ID 1A 1A 1A 1A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and cur |
 CET |
 |
| 2 | CEB01N65 | N-Channel Enhancement Mode Field Effect Transistor CEP01N65/CEB01N65
CEF01N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP01N65 CEB01N65 CEF01N65
VDSS 650V 650V
650V
RDS(ON) 10.5Ω 10.5Ω
10.5Ω
ID 1.3A 1.3A 1.3A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and |
CET |
|
| 1 | CEB01N6G | N-Channel Enhancement Mode Field Effect Transistor CEP01N6G/CEB01N6G CEF01N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP01N6G CEB01N6G CEF01N6G
VDSS 600V 600V
600V
RDS(ON) 9.3Ω 9.3Ω
9.3Ω
ID @VGS 1A 10V 1A 10V 1A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capabili |
CET |
|
| Esta página es del resultado de búsqueda del CEB01N6. Si pulsa el resultado de búsqueda de CEB01N6 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |