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Datasheet CEA6861 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CEA6861   P-Channel Enhancement Mode Field Effect Transistor

CEA6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -2.4A, RDS(ON) = 135mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package. D D S D G SOT-89 G S ABSOLUTE MAXI
 CET
CET		 datasheet CEA6861 pdf

CEA6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CEA6200

N-Channel Enhancement Mode Field Effect Transistor

CEA6200 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V. RDS(ON) = 330mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package. D D S
 CET
CET		 datasheet pdf - CET
CEA6426

N-Channel Enhancement Mode Field Effect Transistor

CEA6426 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4.6A, RDS(ON) = 90mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package. D D SOT-89 S D G G
 CET
CET		 datasheet pdf - CET
CEA6861

P-Channel Enhancement Mode Field Effect Transistor

CEA6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -2.4A, RDS(ON) = 135mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package. D D S D G SOT-89
CET
CET		 datasheet pdf - CET


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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