Datasheet CBSL30B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CBSL30B	NPN SILICON RF POWER TRANSISTOR CBSL30B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL30B is Designed for PACKAGE STYLE .250 BAL FLG .020 x 45° B A Ø.130 NOM. .050 x 45° E D C N FEATURES: • • • Omnigold™ Metalization System F H I J G MAXIMUM RATINGS IC VCBO VCES VEBO PDISS TJ TSTG θ JC 5.0 A 48 V 45 V	Advanced Semiconductor

CBSL Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CBSL100	NPN SILICON RF POWER TRANSISTOR CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) .080x45° A B FULL R (4X).060 R E D C .1925 F H I N L G M FEATURES: • Input Matching Network • • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO V	Advanced Semiconductor
CBSL60B	NPN SILICON RF POWER TRANSISTOR CBSL60B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL60B is Designed for PACKAGE STYLE .450 BAL FLG (A) .060x45° B A FULL R .100x45° C D F FEATURES: • Input Matching Network • • Omnigold™ Metalization System E P G H K J M L N MAXIMUM RATINGS IC VCBO VC	Advanced Semiconductor
CBSL6	NPN SILICON RF POWER TRANSISTOR CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL6 is Designed for PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R .115 .430 D E .125 G H I L F C B 2XØ.130 FEATURES: • • • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCES VEBO PDISS TJ TSTG θ	Advanced Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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