Datasheet CBS05F30 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CBS05F30	Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications • High-Speed Switching 2. Features (1) Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit CBS05F30 1: Cathode 2: Anode CST2B 4. Absolute Maximum Rati	Toshiba Semiconductor

CBS05 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CBS05F30	Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications • High-Speed Switching 2. Features (1) Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit CBS05F30 1: Cathode 2: Anode CST2B 4. A	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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