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Datasheet C572 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | C572 | NPN Transistor - 2SC572 2SC752(G)TM
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC752(G)TM
Ultra High Speed Switching Applications Computer, Counter Applications
Unit: mm
· High transition frequency: fT = 400 MHz (typ.) · Low saturation voltage: VCE (sat) = 0.3 V (max) · High speed switching time: ts |
 Toshiba Semiconductor |
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| 2 | C5720 | NPN Transistor - 2SC5720 2SC5720
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5720
MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS
· Low Saturation Voltage: VCE (sat) (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic Collector-Base voltage Collector-Em |
Toshiba Semiconductor |
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| 1 | C5723 | NPN Triple Diffused Planar Silicon Transistor Ordering number : ENN7398
2SC5723
NPN Triple Diffused Planar Silicon Transistor
2SC5723
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
• • • •
Package Dimensions
unit : mm 2048B
[2SC5723]
6.0
20.0 3.3 5.0
High speed. High breakdown voltage(VCBO=1500V) |
 Sanyo |
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