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Datasheet C2655 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | C2655 | NPN Transistor - 2SC2655 2SC2655
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2655
Power Amplifier Applications Power Switching Applications
Industrial Applications Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW • High-speed s |
Toshiba |
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1 | C2655 | NPN Transistor - 2SC2655 UNISONIC TECHNOLOGIES CO., LTD 2SC2655
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
FEATURES
*Low saturation voltage VCE(SAT)= 0.5V (Max.) *High speed switching time tstg=1.0µs (Typ.)
NPN SILICON TRANSISTOR
1 TO-92NL
*Pb-free plating product number: 2SC2655L
ORDERING INFORMATION
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Número de pieza | Descripción | Fabricantes | |
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