Datasheet BYD33J Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BYD33J	Silicon And Fast Recovery Rectifiers RoHS Silicon And Fast Recovery Rectifiers TYPE Maximum Maximum Peak Forward Recurrent Average Surge Current Peak Forward Half Reverse Rectified sine-wave Voltage Current Superimposed Maximum Forward Voltage Maximum DC Reverse Current TA=25 OC Typical Reverse Recovery Time Package Style T	WEJ	rectifier
2	BYD33J	Fast soft-recovery controlled avalanche rectifiers DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D119 BYD33 series Fast soft-recovery controlled avalanche rectifiers Product speciﬁcation Supersedes data of 1996 Jun 05 1996 Sep 18 Philips Semiconductors Product speciﬁcation Fast soft-recovery controlled avalanche rectiﬁers FEATURES •	NXP Semiconductors	rectifier
3	BYD33J	SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE200 TO 1000V CURRENT: 1.0A BYD33D THRU BYD33M SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE200 TO 1000V CURRENT: 1.0A FEATURE High temperature metallurgic ally bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500 High tempe	Gulf Semiconductor	rectifier
4	BYD33J	AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES BYD33D - BYD33M PRV : 200 - 1000 Volts Io : 1.3 Amperes FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free AVALANCHE FAST SOFT-RECOVERY RE	SynSemi	rectifier
5	BYD33J	FAST RECOVERY RECTIFIERS BL FEATURES Low cos t GALAXY ELECTRICAL BYD33D(Z)---BYD33M(Z) VOLTAGE RANGE: 200 --- 1000 V CURRENT: 1.3 A FAST RECOVERY RECTIFIERS DO - 15 Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Is opropanol and s im ilar	Galaxy Semi-Conductor Holdings Limited	rectifier
6	BYD33JZ	FAST RECOVERY RECTIFIERS BL GALAXY ELECTRICAL FAST RECOVERY RECTIFIERS BYD33D(Z)---BYD33M(Z) VOLTAGE RANGE: 200 --- 1000 V CURRENT: 1.3 A FEATURES Low cost Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Is opropanol and s im ilar s olvents MECHANICAL DATA Cas e:J	Galaxy Semi-Conductor Holdings Limited	rectifier

BYD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BYD11	Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BYD11 series Controlled avalanche rectifiers Product speciﬁcation Supersedes data of April 1996 1996 Sep 26 Philips Semiconductors Product speciﬁcation Controlled avalanche rectiﬁers FEATURES • Glass passivated • High maximum o	NXP Semiconductors	rectifier
2	BYD1100	Hyper fast soft-recovery rectifier	NXP Semiconductors	rectifier
3	BYD11D	Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BYD11 series Controlled avalanche rectifiers Product speciﬁcation Supersedes data of April 1996 1996 Sep 26 Philips Semiconductors Product speciﬁcation Controlled avalanche rectiﬁers FEATURES • Glass passivated • High maximum o	NXP Semiconductors	rectifier
4	BYD11G	Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BYD11 series Controlled avalanche rectifiers Product speciﬁcation Supersedes data of April 1996 1996 Sep 26 Philips Semiconductors Product speciﬁcation Controlled avalanche rectiﬁers FEATURES • Glass passivated • High maximum o	NXP Semiconductors	rectifier
5	BYD11J	Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BYD11 series Controlled avalanche rectifiers Product speciﬁcation Supersedes data of April 1996 1996 Sep 26 Philips Semiconductors Product speciﬁcation Controlled avalanche rectiﬁers FEATURES • Glass passivated • High maximum o	NXP Semiconductors	rectifier
6	BYD11K	Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BYD11 series Controlled avalanche rectifiers Product speciﬁcation Supersedes data of April 1996 1996 Sep 26 Philips Semiconductors Product speciﬁcation Controlled avalanche rectiﬁers FEATURES • Glass passivated • High maximum o	NXP Semiconductors	rectifier
7	BYD11M	Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BYD11 series Controlled avalanche rectifiers Product speciﬁcation Supersedes data of April 1996 1996 Sep 26 Philips Semiconductors Product speciﬁcation Controlled avalanche rectiﬁers FEATURES • Glass passivated • High maximum o	NXP Semiconductors	rectifier
8	BYD12	Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D423 BYD12 series Controlled avalanche rectifiers Preliminary speciﬁcation 1998 Dec 03 Philips Semiconductors Preliminary speciﬁcation Controlled avalanche rectiﬁers FEATURES • Glass passivated • High maximum operating temperature �	NXP Semiconductors	rectifier
9	BYD123	Ultra fast low-loss rectifier DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D119 BYD123 Ultra fast low-loss rectifier Product speciﬁcation Supersedes data of 1998 Dec 04 1999 Feb 10 Philips Semiconductors Product speciﬁcation Ultra fast low-loss rectiﬁer FEATURES • Glass passivated • High maximum operating te	NXP Semiconductors	rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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