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Datasheet BUZ21 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
16 | BUZ21 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 21
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 21
VDS
100 V
ID
21 A
RDS(on)
0.085 Ω
Package TO-220 AB
Ordering Code C67078-S1308-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 21 Unit A
ID |
Siemens Semiconductor Group |
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15 | BUZ21 | 19A/ 100V/ 0.100 Ohm/ N-Channel Power MOSFET BUZ21
Semiconductor
Data Sheet
October 1998
File Number 2420.1
19A, 100V, 0.100 Ohm, N-Channel Power MOSFET
Features
• 19A, 100V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.100Ω (BUZ21) field effect transistor designed for applications such as • SOA |
Intersil Corporation |
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14 | BUZ21 | SIPMOS Power Transistor SIPMOS ® Power Transistor
BUZ 21
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 21
100 V
21 A
0.085 Ω
TO-220 AB
C67078-S1308-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current |
Infineon Technologies AG |
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13 | BUZ210 | (BUZ210 / BUZ211) Power Transistors w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
.D
a t a
e h S
t e
U 4
.c
m o
w
w w
a .D
S a t
e e h
U 4 t
m o .c
|
Siemens |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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