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Datasheet BUZ10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 34 | BUZ10 | N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET ®
BUZ10
N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET
T YPE BUZ 10
s s s s s
V DSS 50 V
R DS(o n) < 0.07 Ω
ID 23 A
TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
3 1 2
APPLICATIONS HIGH CURRENT, H |
 STMicroelectronics |
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| 33 | BUZ10 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 10
Not for new design
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 10
VDS
50 V
ID
23 A
RDS(on)
0.07 Ω
Package TO-220 AB
Ordering Code C67078-S1300-A2
Maximum Ratings Parameter Continuous drain current Symbol Valu |
 Siemens Semiconductor Group |
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| 32 | BUZ10 | Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220 |
 New Jersey Semiconductor |
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| 31 | BUZ100 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) BUZ 100
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G Type BUZ 100 Pin 2 D Pin 3 S
VDS
50 V
ID
60 A
RDS(on)
0.018 Ω
Package TO-220 AB
Orde |
Siemens Semiconductor Group |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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