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Datasheet BUT11 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 30 | BUT11 | Silicon diffused power transistors DISCRETE SEMICONDUCTORS
DATA SHEET
BUT11; BUT11A Silicon diffused power transistors
Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION High-volt |
 NXP Semiconductors |
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| 29 | BUT11 | NPN SILICON POWER TRANSISTOR BUT11 NPN SILICON POWER TRANSISTOR
Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997
q q q
Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current
B C E
1 2 3 TO-220 PACKAGE (TOP VIEW)
Pin 2 is in electrical contact |
 Power Innovations Limited |
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| 28 | BUT11 | NPN SILICON POWER TRANSISTOR |
 TRSYS |
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| 27 | BUT11 | NPN SILICON TRANSISTOR(HIGH VOLTAGE POWER SWITCHING APPLICATIONS) BUT11/11A
HIGH VOLTAGE POWER SWITCHING APPLICATIONS
NPN
SILICON TRANSISTOR
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25°c)
Characteristic Collector-Emitter Voltage:BUT11 :BUT11A Collector-Emitter Voltage:BUT11 :BUT11A Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current |
 Wing Shing Computer Components |
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