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Datasheet BUL741 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | BUL741 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL741
DESCRIPTION ·Collector–Emitter Breakdown Voltage
: V(BR)CEO = 400V(Min.) ·Collector Saturation Voltage
: VCE(sat) = 0.5V(Max) @ IC= 0.7A
APPLICATIONS ·Designed for electronic lamp ballast circuits switch- |
 Inchange Semiconductor |
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| 1 | BUL741 | High voltage fast-switching NPN Power Transistor BUL741
High voltage fast-switching NPN Power Transistor
General features
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High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European Directive
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Description
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 STMicroelectronics |
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