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Datasheet BUL58B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | BUL58B | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL58B
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 100V(Min.) ·Collector Saturation Voltage
: VCE(sat) = 0.2V(Max) @ IC= 1A ·High Speed Switching
APPLICATIONS ·Designed for use in electroni |
Inchange Semiconductor |
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2 | BUL58B | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL58B
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Designed for use in electronic ballast applications
6.3
3.6 Dia.
15.1
18.0
1 2 3
1.3 14.0
0.85
• • • •
0.5
SEMEFAB DESIGNED AND DIFFU |
Seme LAB |
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1 | BUL58BSMD | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR BUL58BSMD
MECHANICAL DATA Dimensions in mm
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
3 .6 0 (0 .1 4 2 ) M a x .
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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Seme LAB |
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Número de pieza | Descripción | Fabricantes | |
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