Datasheet BLS6G2731S-130 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BLS6G2731S-130	LDMOS S-band radar power transistor BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 01 — 26 July 2010 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF perf	NXP Semiconductors

BLS6G2731S- Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BLS6G2731S-130	LDMOS S-band radar power transistor BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 01 — 26 July 2010 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical perform	NXP Semiconductors
BLS6G2731S-120	LDMOS S-band Radar Power Transistor BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product proﬁle 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table	NXP Semiconductors

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