Datasheet BLM9926 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BLM9926	N-Channel Enhancement Mode Power MOSFET Pb Free Product BLM9926 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =20V,ID =6A RDS(ON) < 30mΩ @ VGS=4.5V R	BELLING

BLM9 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BLM9926	N-Channel Enhancement Mode Power MOSFET Pb Free Product BLM9926 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =20V,ID =6A RDS(ON) <	BELLING
BLM9435	P-Channel Enhancement Mode Power MOSFET BLM9435 P-Channel Enhancement Mode MOSFET FEATURES VDS VGS －30V ±20V RDSon TYP 51mR@-10V 68mR@-4V5 ID －5.4A DESCRIPTION This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is part	BELLING
BLM9435A	P-Channel Enhancement Mode Power MOSFET Pb Free Product BLM9435A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM9435A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM app	BELLING

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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