Datasheet BLF6G10LS-200R Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BLF6G10LS-200R	Power LDMOS transistor BLF6G10LS-200R Power LDMOS transistor Rev. 01 — 21 January 2008 Preliminary data sheet 1. Product proﬁle 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF perfo	NXP Semiconductors

BLF6G10LS-2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BLF6G10LS-200	Power LDMOS transistor BLF6G10LS-200 Power LDMOS transistor Rev. 01 — 18 January 2008 Preliminary data sheet 1. Product proﬁle 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performan	NXP Semiconductors
BLF6G10LS-200R	Power LDMOS transistor BLF6G10LS-200R Power LDMOS transistor Rev. 01 — 21 January 2008 Preliminary data sheet 1. Product proﬁle 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performa	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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