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Datasheet BLF6G10LS-200 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | BLF6G10LS-200 | Power LDMOS transistor
BLF6G10LS-200
Power LDMOS transistor
Rev. 01 — 18 January 2008 Preliminary data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1. Typical performance Typical RF perfor |
 NXP Semiconductors |
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| 1 | BLF6G10LS-200R | Power LDMOS transistor
BLF6G10LS-200R
Power LDMOS transistor
Rev. 01 — 21 January 2008 Preliminary data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1. Typical performance Typical RF perfo |
NXP Semiconductors |
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