Datasheet BFY450H Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BFY450H	HiRel NPN Silicon RF Transistor BFY450 HiRel NPN Silicon RF Transistor • • • • • • • HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET 25-	Infineon Technologies AG

BFY4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BFY46	(BFYxx) Medium Power Amplifiers and Switches w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c	Micro Electronics
BFY41	(BFYxx) Medium Power Amplifiers and Switches w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c	Micro Electronics
BFY420	HiRel NPN Silicon RF Transistor BFY420 HiRel NPN Silicon RF Transistor • • • • • • • HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz Hermetically sealed microwave package	Infineon Technologies AG

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Número de pieza	Descripción	Fabricantes	PDF
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