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Datasheet BFY180 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | BFY180 | HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) HiRel NPN Silicon RF Transistor
Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006
BFY 180
Micro |
 Siemens Semiconductor Group |
 |
| 5 | BFY180 | HiRel NPN Silicon RF Transistor BFY180 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Va |
 Infineon Technologies AG |
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| 4 | BFY180ES | HiRel NPN Silicon RF Transistor BFY180 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Va |
Infineon Technologies AG |
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| 3 | BFY180H | HiRel NPN Silicon RF Transistor BFY180 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Va |
Infineon Technologies AG |
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