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Datasheet BFS483 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | BFS483 | NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA) BFS 483
NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • fT = 8GHz
F = 1.2dB at 900MHz
• Two (galvanic) internal isolated Transistors in one package
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type |
Siemens Semiconductor Group |
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1 | BFS483 | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Two (galvanic) internal isolated Transistor in
one package • For orientation in reel see package
information below • Pb |
Infineon Technologies AG |
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Número de pieza | Descripción | Fabricantes | |
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