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Datasheet BFR90 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | BFR90 | HIGH FREQUENCY TRANSISTOR BFR90
CASE 317A-01, STYLE 2 HIGH FREQUENCY TRANSISTOR
NPN SILICON
J<
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Ta = 60°C
Derate above 60°C Storage Temperature
Symbol v CEO VCBO v EBO
"C
P |
 Motorola Semiconductors |
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| 5 | BFR90 | Silicon NPN Planar RF Transistor BFR90
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band antenna amplifier.
Features
D High power gain D Low noise figure D High transition frequency
3
2
94 9308
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 Vishay Telefunken |
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| 4 | BFR90 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
BFR90
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA
Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz
High |
 Microsemi Corporation |
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| 3 | BFR90 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
BFR90 BRF90G
*G Denotes RoHS Compliant, Pb Free Terminal Finish
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA
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 Advanced Power Technology |
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