Datasheet BFR360T Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BFR360T	NPN Silicon RF Transistor BFR360T NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz 3 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Ty	Infineon Technologies AG

BFR3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BFR34A	NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS	Siemens Semiconductor Group
BFR31	N-channel field-effect transistors DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product speciﬁcation Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1997 Dec 05 Philips Semiconductors Product speciﬁcation N-channel ﬁeld-effect transistors DESC	NXP Semiconductors
BFR30	JFET BFR30,31 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Symbol VDS vgs THERMAL CHARACTERISTICS Characteristic Symbol "Total Device Dissipation, T^ = 25°C Derate above 25°C PD Storage Temperature Tstg •Thermal Resistance Junction to Ambient RflJA	Motorola Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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