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Datasheet BFR360 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | BFR360 | NPN Silicon RF Transistor BFR360F
NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz
3 1
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR360 |
 Infineon Technologies AG |
 |
| 5 | BFR360 | NPN Silicon RF Transistor BFR360F
NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz
3 1
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR360 |
Infineon Technologies AG |
|
| 4 | BFR360 | NPN Silicon RF Transistor BFR360F
NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz
3 1
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR360 |
Infineon Technologies AG |
|
| 3 | BFR360F | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• Low noise amplifier for low current applications • Collector design supports 5 V supply voltage • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free thin small
flat package with visible le |
Infineon Technologies AG |
|
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