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Datasheet BFR35AP Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BFR35AP | NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA) BFR 35AP
NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 35AP GEs Q62702-F938 1=B 2= |
 Siemens Semiconductor Group |
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| 2 | BFR35AP | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA
• Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available
BFR35AP
ESD (Electrostatic discharge) sensitive dev |
 Infineon Technologies AG |
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| 1 | BFR35AP | Trans GP BJT NPN 15V 0.045A Automotive 3-Pin SOT-23 |
 New Jersey Semiconductor |
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