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Datasheet BFR280 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | BFR280 | NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) BFR 280
NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • fT = 7.5GHz
F = 1.5dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking |
Siemens Semiconductor Group |
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5 | BFR280 | NPN Silicon RF Transistor BFR280
NPN Silicon RF Transistor
For low noise, low-power amplifiers in mobile
3
communications systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m
fT = 7.5 GHz
F = 1.5 dB at 900 MHz
2 1
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precau |
Infineon Technologies AG |
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4 | BFR280T | Silicon NPN Planar RF Transistor BFR280T/BFR280TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA.
Features
D Low power applications D Low noise figure D Hig |
Vishay Telefunken |
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3 | BFR280TW | Silicon NPN Planar RF Transistor BFR280T/BFR280TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA.
Features
D Low power applications D Low noise figure D Hig |
Vishay Telefunken |
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Número de pieza | Descripción | Fabricantes | |
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