Datasheet BFR193L3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BFR193L3	NPN Bipolar RF Transistor NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR193L3 3 12 ESD (Electrostatic discharge) sensit	Infineon

BFR19 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BFR193	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF	Siemens Semiconductor Group
BFR194	PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications) BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 (NPN) ESD: Electrostatic discharge sensitive device, observe handling pre	Siemens Semiconductor Group
BFR193T	NPN Silicon RF Transistor BFR193T NPN Silicon RF Transistor Preliminary data For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz 3 F = 1.3 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR193T M	Infineon Technologies AG

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Número de pieza	Descripción	Fabricantes	PDF
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