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Datasheet BFR183W Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
2 BFR183W   NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector current from 2 mA to 30mA)

BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 183W RHs Q627
Siemens Semiconductor Group
Siemens Semiconductor Group
datasheet BFR183W pdf
1 BFR183W   Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 availab
Infineon Technologies AG
Infineon Technologies AG
datasheet BFR183W pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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