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Datasheet BFR181T Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BFR181T | Silicon NPN Planar RF Transistor BFR181T/BFR181TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.
Features
D Low noise figure D High power gain
1 1
13 581 |
 Vishay Telefunken |
 |
| 2 | BFR181T | NPN Silicon RF Transistor BFR181T
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
3
collector currents from 0.5 mA to 12 mA
fT = 8 GHz
F = 1.45 dB at 900 MHz
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR181T
Maximum Rati |
 Infineon Technologies AG |
|
| 1 | BFR181TW | Silicon NPN Planar RF Transistor BFR181T/BFR181TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.
Features
D Low noise figure D High power gain
1 1
13 581 |
Vishay Telefunken |
|
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