Datasheet BFP650F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BFP650F	Linear Low Noise SiGe:C Bipolar RF Transistor Linear Low Noise SiGe:C Bipolar RF Transistor • For medium power amplifiers and driver stages • Based on Infineon' s reliable high volume Silicon Germanium technology • High OIP3 and P-1dB • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Minimun noise	Infineon

BFP6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BFP67	Silicon NPN Planar RF Transistor BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF,	Vishay Siliconix
BFP640	NPN Silicon Germanium RF Transistor BFP640 Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2015-03-13 RF & Protection Devices Edition 2015-03-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The informat	Infineon Technologies AG
BFP620F	NPN Silicon Germanium RF Transistor Low Noise SiGe:C Bipolar RF Transistor • High gain low noise RF transistor • Based on Infineon's reliable high volume Silicon Germanium technology • Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz Outstanding noise figure NFmin = 1.3 dB at 6 GHz • Maximum stable gain G	Infineon Technologies AG

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Número de pieza	Descripción	Fabricantes	PDF
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