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Datasheet BFP650 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | BFP650 | High Linearity Silicon Germanium Bipolar RF Transistor BFP650
High Linearity Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.1, 2012-09-13
RF & Protection Devices
Edition 2012-09-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.
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Infineon Technologies AG |
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1 | BFP650F | Linear Low Noise SiGe:C Bipolar RF Transistor Linear Low Noise SiGe:C Bipolar RF Transistor
• For medium power amplifiers and driver stages • Based on Infineon' s reliable high volume Silicon
Germanium technology • High OIP3 and P-1dB • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz
Minimun noise |
Infineon |
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