Datasheet BFP540ESD Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BFP540ESD	Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor • For ESD protected high gain low noise amplifier • High ESD robustness typical value 1000 V (HBM) • Outstanding Gms = 21.5 dB @ 1.8 GHz Minimum noise figure NFmin = 0.9 dB @ 1.8 GHz • Pb-free (RoHS compliant) and halogen-free package with visible lead	Infineon

BFP540 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BFP540	Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier • Outstanding Gms = 21.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.9 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according	Infineon Technologies AG
BFP540ESD	Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor • For ESD protected high gain low noise amplifier • High ESD robustness typical value 1000 V (HBM) • Outstanding Gms = 21.5 dB @ 1.8 GHz Minimum noise figure NFmin = 0.9 dB @ 1.8 GHz • Pb-free (RoHS compliant) and halogen-free packa	Infineon
BFP540F	NPN Silicon RF Transistor BFP540F NPN Silicon RF Transistor • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET to p v ie w 4 3 3 4 XYs 2 1 TSFP-4 45 - Line A T s 1 2 d ir e c tio n o f u n r e	Infineon Technologies AG

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Número de pieza	Descripción	Fabricantes	PDF
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