Datasheet BFP420F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BFP420F	Low Noise Silicon Bipolar RF Transistor BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.1, 2012-11-07 RF & Protection Devices Edition 2012-11-07 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document sh	Infineon Technologies AG

BFP4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BFP420	NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) SIEGET® 25 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metalization for high reliability • SIEGET ®	Siemens Semiconductor Group
BFP405	Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor • For low current applications • For oscillators up to 12 GHz • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz Outstanding Gms = 23 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualificat	Infineon Technologies AG
BFP420	Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor • For high gain and low noise amplifiers • Minimum noise figure NFmin = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz • For oscillators up to 10 GHz • Transition frequency fT = 25 GHz • Pb-free (RoHS compliant) and halogen-	Infineon Technologies AG

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Número de pieza	Descripción	Fabricantes	PDF
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