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Datasheet BFP182 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | BFP182 | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) BFP 182
NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz
F = 1.2dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 182 RGs Q62702-F |
 Siemens Semiconductor Group |
 |
| 8 | BFP182 | NPN Silicon RF Transistor BFP182
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
3 4 2 1
VPS05178
collector currents from 1 mA to 20 mA
fT = 8 GHz
F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP182
Maximum Ratings Parameter
Markin |
 Infineon Technologies AG |
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| 7 | BFP182R | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) BFP 182R
NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz
F = 1.2dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 182R RGs Q62702 |
Siemens Semiconductor Group |
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| 6 | BFP182R | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available
BFP182R
3 2
4 1
ESD (Electrosta |
Infineon Technologies AG |
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