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Datasheet BFP181 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | BFP181 | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) BFP 181
NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz
F = 1.45dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 181 RFs Q6270 |
 Siemens Semiconductor Group |
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| 8 | BFP181 | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available
3 4
BFP181
2 1
ESD (Electros |
 Infineon Technologies AG |
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| 7 | BFP181R | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) BFP 181R
NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz
F = 1.45dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 181R RFs Q62 |
Siemens Semiconductor Group |
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| 6 | BFP181R | NPN Silicon RF Transistor BFP181R
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
fT = 8 GHz
F = 1.45 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP181R
Maximum Ratings Parameter
Marking RFs 1=E
Pi |
Infineon Technologies AG |
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