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Datasheet BFG193 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BFG193 | NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) BFG 193
NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz
F = 1.3dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 193 BFG193 Q62702- |
 Siemens Semiconductor Group |
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| 2 | BFG193 | NPN Silicon RF Transistor BFG193
NPN Silicon RF Transistor
For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz
4
F = 1.3 dB at 900 MHz
3 2 1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFG193
Maximum Ratings Parameter
Marking BFG |
 Infineon Technologies AG |
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| 1 | BFG193 | Trans GP BJT NPN 12V 0.08A Automotive 4-Pin(3+Tab) SOT-223 |
 New Jersey Semiconductor |
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