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Datasheet BF998R Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | BF998R | Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) BF 998R Silicon N-Channel MOSFET Tetrode
• Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 998R Marking Ordering Co |
 Siemens Semiconductor Group |
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| 8 | BF998R | Silicon N-channel dual-gate MOS-FETs DISCRETE SEMICONDUCTORS
DATA SHEET
BF998; BF998R Silicon N-channel dual-gate MOS-FETs
Product specification Supersedes data of April 1991
1996 Aug 01
NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
Product specification
BF998; BF998R
FEATURES Short channel transistor with high forwa |
 NXP Semiconductors |
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| 7 | BF998R | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode BF998/BF998R/BF998RW
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
Input and mixer stages in UHF tuners.
Features
D D D D
Integrated gate protection diodes Low noise figure Low feedbac |
 Vishay Telefunken |
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| 6 | BF998R | Silicon N-Channel MOSFET Tetrode Silicon N_Channel MOSFET Tetrode
• Short-channel transistor with high S / C quality factor
• For low-noise, gain-controlled input stage up to 1 GHz
• Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF998...
ESD (Electrostatic discharge) sensitive device, observe handling |
 Infineon Technologies AG |
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