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Datasheet BF998 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 18 | BF998 | Silicon N-channel dual-gate MOS-FETs DISCRETE SEMICONDUCTORS
DATA SHEET
BF998; BF998R Silicon N-channel dual-gate MOS-FETs
Product specification Supersedes data of April 1991
1996 Aug 01
NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
Product specification
BF998; BF998R
FEATURES Short channel transistor with high forwa |
 NXP Semiconductors |
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| 17 | BF998 | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode BF998/BF998R/BF998RW
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
Input and mixer stages in UHF tuners.
Features
D D D D
Integrated gate protection diodes Low noise figure Low feedbac |
 Vishay Telefunken |
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| 16 | BF998 | Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) Silicon N Channel MOSFET Tetrode
BF 998
Features
q q
Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz
Type BF 998
Marking MO
Ordering Code (tape and reel) Q62702-F1129
Pin Configuration 1 2 3 4 S D G2 G1
Package1) SOT-143
Maximum |
 Siemens Semiconductor Group |
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| 15 | BF998 | Silicon N-Channel MOSFET Tetrode Silicon N_Channel MOSFET Tetrode
• Short-channel transistor with high S / C quality factor
• For low-noise, gain-controlled input stage up to 1 GHz
• Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF998...
ESD (Electrostatic discharge) sensitive device, observe handling |
 Infineon Technologies AG |
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