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Datasheet BF823 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | BF823 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BF821/BF823 TRANSISTOR (PNP)
SOT-23
FEATURES z Low current (max.-50 mA) z High voltage (max.-300V) z Telephony and professional communication equipment.
1. BASE 2. EMITTER 3. COLLECTOR
MARKING: BF821:1W, B |
 JCET |
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| 6 | BF823 | PNP High-Voltage Transistors PNP High-Voltage Transistors
FEATURES
z Low current(max.-50mA). z High voltage(max.-300V). z Complements:BF820,BF822.
Pb
Lead-free
APPLICATIONS
z Telephony and professional communication equipment.
Production specification
BF821/BF823
ORDERING INFORMATION
Type No.
Marking
BF821 BF823
1W 1Y
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 Galaxy Microelectronics |
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| 5 | BF823 | SILICON EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BF821 BF823
SILICON EPITAXIAL TRANSISTORS
P–N–P transistors
Marking BF821 = 1W BF823 = 1Y
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
Pin configuration 1 = BASE 2 = EMITTER |
 CDIL |
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| 4 | BF823 | PNP High-Voltage Transistors SMD Type
Transistors
PNP High-Voltage Transistors BF821,BF823
Features
Low current (max. 50 mA) High voltage (max. 300 V).
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1+0.05
-0.01
+0.10.97 -0.1
Absolute Maximum Ratings Ta = |
 Kexin |
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