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Datasheet BF259 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
7 | BF259 | HIGH VOLTAGE TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tq = 25°C
Derate above 25°C
Operating and Storage Junctio |
Motorola Semiconductors |
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6 | BF259 | NPN SILICON HIGH VOLTAGE TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON HIGH VOLTAGE TRANSISTORS
BF257, BF 258, BF259
TO-39 Metal Can Package
INTENDED FOR VIDEO OUTPUT STAGES IN BLACK AND WHITE AND IN COLOUR TELEVISION REVEIVERS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC u |
CDIL |
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5 | BF259 | Bipolar NPN Device BF259
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
2 13
45°
2.54 (0.100)
1 – Emitter
TO39 (TO |
Seme LAB |
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4 | BF259 | High Voltage Power Transistors High Voltage Power Transistor
Pin Configuration 1. Emitter 2. Base 3. Collector
Features:
• Devices with breakdown voltages of 160V minimum • NPN Silicon High Voltage Power Transistors
Absolute Maximum Ratings:
(Ta = 25°C unless otherwise specified) Characteristic
Collector Base Volta |
Multicomp |
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Número de pieza | Descripción | Fabricantes | |
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