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Datasheet BF2030 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | BF2030 | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V) BF 2030
Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V
3 4 2 1
VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type BF 2030
Marking Ordering Code NEs Q62702-F1773
Pin |
 Siemens Semiconductor Group |
 |
| 4 | BF2030 | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1GHz
• Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF2030...
AGC
RF Input RG1
G2 G1
VGG
GND
Drain
RF Output + DC
ESD (Electrostatic discharge) sensit |
 Infineon Technologies AG |
|
| 3 | BF2030R | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1GHz
• Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF2030...
AGC
RF Input RG1
G2 G1
VGG
GND
Drain
RF Output + DC
ESD (Electrostatic discharge) sensit |
Infineon Technologies AG |
|
| 2 | BF2030W | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V) BF 2030W
Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type
Marking Ordering Code Q62702-F1774
Pin Configurat |
Siemens Semiconductor Group |
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