Datasheet BF1005W Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BF1005W	Silicon N-Channel MOSFET Tetrode BF1005... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Typ	Infineon Technologies AG

BF10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BF1009SW	Silicon N-Channel MOSFET Tetrode BF1009SW Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled 3 4 input stages up to 1GHz Operating voltage 9V Integrated bias network Drain AGC HF Input G2 G1 HF Output + DC 2 1 VPS05605 GND EHA07215 ESD: Electrostatic discharge sensitive device, obse	Infineon
BF1005	Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1005 Marking Ordering Co	Siemens Semiconductor Group
BF1005	Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF1005... AGC RF Input Drain RF Output G2 + DC G1 G	Infineon Technologies AG

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Número de pieza	Descripción	Fabricantes	PDF
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