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Datasheet BDY55 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | BDY55 | NPNSILICON TRANSISTORS/ DIFFUSED MESA(LF Large Signal Power Amplificational High Current Fast Switching) |
 ETC |
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| 7 | BDY55 | (BDYxx) Silicon Transistors w
w
w
.d
e e h s a t a
. u t4
m o c
|
 Advanced Semiconductor |
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| 6 | BDY55 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDY55
DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·LF large signal power amplification.
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 si |
 SavantIC |
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| 5 | BDY55 | Bipolar NPN Device BDY55
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max |
 Seme LAB |
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