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Datasheet BDY24 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | BDY24 | NPN SILICON TRANSISTORS/ DIFFUSED MESA |
 ETC |
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| 10 | BDY24 | (BDY23 - BDY25)NPN SILICON TRANSISTORS BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC IB PTOT TJ TStg
Collector-Emitter Voltage
Ratings
www.DataSheet.net/
Value
BDY23, 180T2 BDY24, 181T2 |
 Comset Semiconductor |
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| 9 | BDY24 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDY24
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 90V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed
APPLICATIONS ·Designed for LF signal powe a |
 Inchange Semiconductor |
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| 8 | BDY24 | Trans GP BJT NPN 90V 6A 3-Pin(2+Tab) TO-3 |
 New Jersey Semiconductor |
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