|
|
Datasheet BDY23 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
10 | BDY23 | NPN SILICON TRANSISTORS/ DIFFUSED MESA |
ETC |
|
9 | BDY23 | (BDY23 - BDY25)NPN SILICON TRANSISTORS BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC IB PTOT TJ TStg
Collector-Emitter Voltage
Ratings
www.DataSheet.net/
Value
BDY23, 180T2 BDY24, 181T2 |
Comset Semiconductor |
|
8 | BDY23 | Bipolar NPN Device BDY23
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max |
Seme LAB |
|
7 | BDY23 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDY23
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC = 2A ·High Switching Speed
APPLICATIONS ·Designed for LF signal powe a |
Inchange Semiconductor |
Esta página es del resultado de búsqueda del BDY23. Si pulsa el resultado de búsqueda de BDY23 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |