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Datasheet BDY13-6 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | BDY13-6 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY13-6
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1V(Max)@ IC = 3A ·High Switching Speed
APPLICATIONS ·Designed for LF signal powe |
Inchange Semiconductor |
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1 | BDY13-6 | NPN Silicon Planar Trnasistors |
Siemens Semiconductor Group |
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Número de pieza | Descripción | Fabricantes | |
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