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Datasheet BDX63A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BDX63A | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR BDX63 BDX63A BDX63B BDX63C
MECHANICAL DATA Dimensions in mm
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
9.0 max.
2. 5
26.6 max.
4.2
39.5 max.
B
30.1
E
20.3 max.
1 .0
NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching a |
 Seme LAB |
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| 2 | BDX63A | Silicon NPN Darlington Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDX62/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching ap |
 Inchange Semiconductor |
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| 1 | BDX63A | NPN SILICON DARLINGTONS BDX63 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR
The BDX63, BDX63A, BDX63 and BDX63C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX62, BDX62A, BDX62B, BDX62C. Compliance to Ro |
 Comset Semiconductors |
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