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Datasheet BDX62C Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | BDX62C | Bipolar PNP Device in a Hermetically sealed TO3 Metal Package BDX62C
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) ma |
Seme LAB |
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2 | BDX62C | Silicon PNP Darlington Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type BDX63/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching |
Inchange Semiconductor |
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1 | BDX62C | PNP SILICON DARLINGTONS BDX62 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR
The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary NPN are BDX63, BDX63A, BDX63B, BDX63C. Compliance to R |
Comset Semiconductors |
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Número de pieza | Descripción | Fabricantes | |
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