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BDX33A Price ( Datasheet, Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
9 BDX33A   NPN/PNP PLASTIC POWER TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP PLASTIC POWER TRANSISTORS BDX33, 33A, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D TO-220 Plastic Package Power Darlington for Linear Switchilng Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case VCEO VCBO VEBO IC ICM IB PD Tj, Tstg Rth(j-c) BDX33 BDX34 45 45 BDX33A BDX33B BDX33C BDX33
CDIL
CDIL
datasheet BDX33A pdf
8 BDX33A   NPN Silicon Power Darlingtons

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BDX33 THRU BDX33D 0,9:708 • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) • Designed For Complementary Use with BDX34, BDX34A, BDX34B, :BDX34C and BDX34D • 70W at 25 Cass Temperature NPN Silicon Power Darlingtons • 10A Continuous Collector Current • Minimum hFE of 750 at 3.0V, 3.0A • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 °$EVROXWH 0D[LPXP 5DWLQJV #  & 8QOHVV 2WKHUZLVH 1RWHG TO
MCC
MCC
datasheet BDX33A pdf
7 BDX33A   Power Linear and Switching Applications

BDX33/A/B/C BDX33/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C VCEO Collector-Emitter Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 10 15 0.25 70 150 - 65 ~ 150 V V V V V V V
Fairchild Semiconductor
Fairchild Semiconductor
datasheet BDX33A pdf
6 BDX33A   POWER TRANSISTORS(10A/70W)

A A
Mospec Semiconductor
Mospec Semiconductor
datasheet BDX33A pdf
5 BDX33A   NPN SILICON POWER DARLINGTONS

BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D 70 W at 25°C Case Temperature B TO-220 PACKAGE (TOP VIEW) q q q 1 2 3 10 A Continuous Collector Current Minimum hFE of 750 at 3 V, 3 A C E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDX33 BDX33A Collector-base voltage (IE = 0) BDX33B BDX33C BDX33D BDX33 BDX33A Collector-emitter voltage (IB = 0) BDX33B BDX33
Power Innovations Limited
Power Innovations Limited
datasheet BDX33A pdf
4 BDX33A   Silicon NPN Power Transistors

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX34/A/B/C APPLICATIONS ·For power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDX33/A/B/C Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BDX33 www.DataSheet.net/ CONDITIONS VALUE 45 UNIT VCBO Collector-base voltage BDX33A BDX33B BDX33C BDX33 Open emitter 60 80 100 45 V VCEO Collector-emitter voltage BDX33A BDX33B BDX33C Open base 60 80 100 V VEBO IC ICM IB PC Tj Tstg Emitter-base vol
Savantic
Savantic
datasheet BDX33A pdf
3 BDX33A   (BDX33 / BDX34) NPN/PNP PLASTIC POWER TRANSISTORS

Transys Electronics L I M I T E D NPN/PNP PLASTIC POWER TRANSISTORS BDX33, 33A, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D TO-220 Plastic Package Power Darlington for Linear Switchilng Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case VCEO VCBO VEBO IC ICM IB PD www.DataSheet.net/ BDX33 BDX34 45 45 BDX33A BDX33B BDX33C BDX33D BDX34A BDX34B BDX34C BDX34D 60 80 100 120 60 80 100 120 5.0
TRANSYS
TRANSYS
datasheet BDX33A pdf
2 BDX33A   COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

NPN BDX33 – BDX33A – BDX33B – BDX33C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are the BDX34A, BDX34B and BDX34C respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings www.DataSheet.net/ Value BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C 45 60 80 100 45 60 80 100 10 15 0.25 70 -65 to +150 Unit VCEO Collector-Emitter Voltage IB=0 V
Comset Semiconductors
Comset Semiconductors
datasheet BDX33A pdf
1 BDX33A   Trans Darlington NPN 60V 10A 3-Pin(3+Tab) TO-220

New Jersey Semiconductor
New Jersey Semiconductor
datasheet BDX33A pdf


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