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BDX14AA Price ( Datasheet, Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 BDX14AA   

PNP SILICON TRANSISTOR/ EPITAXIAL BASE


BDX14AA MECHANICAL DATA Dimensions in mm PNP SILICON TRANSISTOR, EPITAXIAL BASE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 24.33 (0.958) 24.43 (0.962) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 14.48 (0.570) 14.99 (0.590) FEATURES: • LF Large Signal Power Amplification • Medium Current Switching 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) TO66 Package. Pin 1 – Base Pin 2 – Emitter Case - Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VCER VCEX VEBO IC IB Ptot TJ TSTG Rth-(j-c) Collector – Base Voltage (Open Em
Seme LAB
Seme LAB
datasheet BDX14AA pdf

BDX1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
BDX18

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX18 DESCRIPTION ·With TO-3 package ·High switching speed APPLICATIONS ·LF large signal power amplification ·Suitable for series and shunt regulators, high fidelity amplifiers
SavantIC
SavantIC
datasheet BDX18 pdf
BDX18

PNP SILICON TRANSISTOR EPITAXIAL BASE

ETC
ETC
datasheet BDX18 pdf
BDX10

Bipolar NPN Device

BDX10 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.
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Seme LAB
datasheet BDX10 pdf
BDX14

PNP SILICON TRANSISTOR/ EPITAXIAL BASE

BDX14AA MECHANICAL DATA Dimensions in mm PNP SILICON TRANSISTOR, EPITAXIAL BASE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 24.33 (0.958) 24.43 (0.962) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 14.48 (0.570) 14.99 (0.590) F
Seme LAB
Seme LAB
datasheet BDX14 pdf
BDX16A

Bipolar PNP Device

BDX16A Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.
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Seme LAB
datasheet BDX16A pdf
BDX12

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

BDX12 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197
Seme LAB
Seme LAB
datasheet BDX12 pdf
BDX18N

PNP SILICON TRANSISTOR EPITAXIAL BASE

ETC
ETC
datasheet BDX18N pdf
BDX18

PNP SILICON TRANSISTOR EPITAXIAL BASE

BDX18 – BDX18N PNP SILICON TRANSISTOR EPITAXIAL BASE LF Large Signal Power Amplification High Current Switching Thermal Fatigue Inspection Compliance to RoHS Applications : • • • • Series and shunt regulators High Fidelity Amplifiers Power-switching circuits Solenoid d
Comset Semiconductors
Comset Semiconductors
datasheet BDX18 pdf


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